ION-BEAM INDUCED PLASTIC-DEFORMATION IN AMORPHOUS MATERIALS INVESTIGATED BY MARKER IMPLANTATION AND RBS

被引：14

作者：

BENYAGOUB, A

KLAUMUNZER, S

THOME, L

DRAN, JC

GARRIDO, F

DUNLOP, A

机构：

[1] CNRS,INST NATL PHYS NUCL & PHYS PARTICULES,F-91405 ORSAY,FRANCE

[2] ECOLE POLYTECH,CEA,DTA,CEREM,DTM,SOLIDES IRRADIES LAB,F-91128 PALAISEAU,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95558-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion electronic energy loss induces atomic transport (plastic deformation) in amorphous alloys irradiated with high-energy heavy ions. Such a phenomenon can be investigated by measuring, with the RBS technique, the modification of a marker profile implanted in the near-surface region of the irradiated target. Ion beams are thus used at three stages of the experiment: implantation, irradiation and analysis. Irradiation of amorphous Ni3B with hundreds-MeV Xe or I ions leads to a shift of the maximum of the Bi marker profile towards the surface of the sample together with a decrease of the peak width and of the peak integral. The results are in qualitative and quantitative agreement with the large plastic deformation observed in amorphous materials.

引用

页码：684 / 686

页数：3

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