DERIVATION OF CURRENT-VOLTAGE CHARACTERISTICS FOR GRADED HETEROJUNCTIONS

被引：10

作者：

HALL, WF ^{[1
]}

机构：

[1] N AMER ROCKWELL CORP,SCI CTR,1049 CAMINO DOS RIOS,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 23期

关键词：

D O I：

10.1049/el:19730404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：548 / 549

页数：2

共 8 条

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[3] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J].

DONNELLY, JP ;

MILNES, AG .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09) :1468-&

[4]

KROEMER H, 1957, RCA REV, V18, P237

[5] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132

[6] P-N HETEROJUNCTIONS [J].

PERLMAN, SS ;

FEUCHT, DL .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :911-923

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

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