GROWTH OF SILICON-CARBIDE CRYSTALS BY VAPOR-LIQUID-SOLID (VLS) MECHANISM IN SUBLIMATION METHOD

被引：15

作者：

TAIROV, YM ^{[1
]}

TSVETKOV, VF ^{[1
]}

KHLEBNIKOV, II ^{[1
]}

机构：

[1] ELECTROTECH INST, 5 PROFESSOR POPOV ST, LENINGRAD, USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1973年 / 20卷 / 02期

关键词：

D O I：

10.1016/0022-0248(73)90130-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：155 / 157

页数：3

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[5]

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[7]

SHAFFER TB, 1969, MATER RES BULL, V4, P213

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VAHNER H, 1970, FIZ TVERD TELA, V12, P1543

[9] LANTHANUM-STIMULATED HIGH-TEMPERATURE WHISKER GROWTH OF ALPHA-SIC [J].

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[10]

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