NONTRIVIAL TRANSPORT PHENOMENA IN EXTREMELY STRAINED SILICON AND GERMANIUM-CRYSTALS

被引:2
作者
BAIDAKOV, VV
ERMAKOV, VN
GORIN, AE
KOLOMOETS, VV
SHENDEROVSKII, VA
机构
[1] Semiconductor Physics Institute, Academy of Sciences of Ukraine, Kiev 28, 252650
关键词
SEMICONDUCTORS; ELECTRICAL CONDUCTIVITY; ELECTRONIC STRUCTURE;
D O I
10.1016/0022-3697(94)00200-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present the analysis of the results of strain-induced transport phenomena in n-Si and n-Ge crystals. The advantages of the high uniaxial strain, as compared to the low strain, method are demonstrated. The mechanisms of the strain-induced phenomena correlate with the corresponding band structure transformation. Considerable differences in the position and shape of the stress dependence of the breakdown field for the impurities Sb, P and As in Ge are explained.
引用
收藏
页码:319 / 322
页数:4
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