NEW PHOTONIC DEVICE INTEGRATION BY SELECTIVE-AREA MOVPE AND ITS APPLICATION TO OPTICAL MODULATOR LASER INTEGRATION

被引:7
作者
AOKI, M
SUZUKI, M
TANIWATARI, T
SANO, H
KAWANO, T
机构
[1] Central Research Lab, Hitachi Ltd., Tokyo, 185, Kokubunji
关键词
PHOTONIC INTEGRATED CIRCUITS; OPTICAL MODULATION; SEMI CONDUCTOR LASERS;
D O I
10.1002/mop.4650070312
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article describes a novel fabrication technology for photonic integrated circuits (PICs) that easily produces a smooth and high-quality waveguide coupling between interconnected guided-wave elements. This technique is based on the in-plane quantum energy control selective area metal-organic vapor-phase epitaxy of multiple quantum-well (MQW) structures. Good local quantum energy control over a very wide range is shown for simultaneously grown MQW crystals. Moreover, the crystal quality, well/barrier heterointerface, and flatness and uniformity of these selectively grown MQW crystals are bound to be as good as those of normally grown crystals. This technique is applied to an electroabsorption modulator/ distributed feedback laser integrated device. Superior device performance, including a low threshold and high-efficiency lasing properties, as well as high-speed, low-drive-voltage, and low-chirp modulator characteristics are attained due to improved optical coupling, easy fabrication, and sufficient crystal quality of selectively grown MQW structures. 2.5 Gbit/s penalty-free data transmission is demonstrated over an 80-km normal single-mode fiber, which, combined with long-term device reliability, makes this integration technique more attractive for practical fabrication of semiconductor PICs. (C) 1994 John Wiley and Sons, Inc.
引用
收藏
页码:132 / 139
页数:8
相关论文
共 30 条
  • [1] Suematsu Y., Arai S., Kishino K., Dynamic Single‐Mode Semiconductor Lasers with a Distributed Reflector, Journal of Lightwave Technology, 1 LT, pp. 161-176, (1983)
  • [2] Koch T.L., Koren U., Semiconductor Photonic Integrated Circuits, J. Quantum Electron., 27, pp. 641-653, (1991)
  • [3] Kato T., Sasaki T., Kida N., Komatsu K., Mito I., (1991)
  • [4] Aoki M., Sano H., Suzuki M., Takahashi M., Uomi K., Takai A., Novel Structure MQW Electroabsorption‐Modulator/DFB‐Laser Integrated Device Fabricated by Selective Area MOCVD Growth, Electronics Letters, 27, pp. 2138-2140, (1991)
  • [5] Colas E., Caneat C., Frei M., Clausen E.M., Quinn W.E., Kim M.S., In Situ Definition of Semiconductor Structures by Selective Area Growth and Etching, Appl. Phys. Lett., 59, pp. 2019-2021, (1991)
  • [6] Sasaki T., Sakata Y., Kida N., Kitamura M., Mito I., (1992)
  • [7] Aoki M., Takahashi M., Suzuki M., Sano H., Uomi K., Kawano T., Takai A., High‐Extinction‐Ratio MQW Electroabsorption Modulator Integrated DFB Laser Fabricated by In‐Plane Bandgap Energy Control Technique, Photon. Technol. Lett., 4, pp. 580-582, (1992)
  • [8] Takahashi M., Suzuki M., Aoki M., Uomi K., Kawano T., (1992)
  • [9] Sasaki T., Mito I., (1992)
  • [10] Aoki M., Suzuki M., Takahashi M., Sano H., Ido T., Kawano T., Takai A., High‐Speed (10 Gbit/s) and Low‐Drive‐Voltage (1 V Peak to Peak) InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated DFB Laser with Semi‐Insulating Buried Heterostructure, Electron. Lett., 28, pp. 1157-1158, (1992)