ION-IMPLANTATION IN CONJUGATED POLYMERS - MECHANISMS FOR GENERATION OF CHARGE-CARRIERS

被引:34
作者
MOLITON, A
LUCAS, B
MOREAU, C
FRIEND, RH
FRANCOIS, B
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
[2] INST CHARLES SANDRON,CNRS,EAHP,CRM,F-67083 STRASBOURG,FRANCE
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 69卷 / 06期
关键词
D O I
10.1080/01418639408240186
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ion implantation in conjugated polymers can produce both doping (with suitable choice of ions) and damage in the form of broken covalent bonds. We consider the electronic and transport properties as assessed from measurements on poly(paraphenylene) of d.c. conductivity, thermopower and a.c. conductivity studied against temperature for various implantation parameters. Damage is produced at high implantation energies and high doses, and we find that transport phenomena occur mainly in degenerate states near the Fermi energy, exhibiting a p-type thermopower. We propose a model in which the sp2 sigma-dangling-bond states formed as a result of bond scission are filled from the pi valence band. This partial emptying of the valence band is consistent with the transport properties. Lower implantation doses at lower energies induce doping in polaronic bands, with both p-type and n-type thermopower, depending on the ion implanted, although the effects of the defects present can appear, especially at low temperatures.
引用
收藏
页码:1155 / 1171
页数:17
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