PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS

[1] COMBINED AC AND DC THERMOCURRENT MEASUREMENTS TO STUDY MOLECULAR RELAXATION AND ELECTRICAL PHENOMENA IN POLYVINYLIDENE FLUORIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2559 - 2573

[2] OBSERVATION OF DIPOLAR ACTIVITY IN AMORPHOUS SE AND SOME OF ITS AS ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (24) : 1412 - 1415

[3] ABKOWITZ M, 1977, 7TH P INT C AM LIQ S

[4] ABKOWITZ M, 1967, J CHEM PHYS, V46, P4337

[5] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[6] TRAPPING PROCESSES IN AMORPHOUS SELENIUM [J]. PHYSICAL REVIEW, 1967, 159 (03): : 664 - &

[7] ENCK RC, 1974, B AM PHYS SOC, V211, P19

[8] DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J]. PHYSICAL REVIEW, 1962, 125 (04): : 1177 - &

[9] HAWARD RN, 1973, PHYSICS GLASSY POLYM, P5

[10] Juska G., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P363

[1] COMBINED AC AND DC THERMOCURRENT MEASUREMENTS TO STUDY MOLECULAR RELAXATION AND ELECTRICAL PHENOMENA IN POLYVINYLIDENE FLUORIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2559 - 2573

[2] OBSERVATION OF DIPOLAR ACTIVITY IN AMORPHOUS SE AND SOME OF ITS AS ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (24) : 1412 - 1415

[3] ABKOWITZ M, 1977, 7TH P INT C AM LIQ S

[4] ABKOWITZ M, 1967, J CHEM PHYS, V46, P4337

[5] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[6] TRAPPING PROCESSES IN AMORPHOUS SELENIUM [J]. PHYSICAL REVIEW, 1967, 159 (03): : 664 - &

[7] ENCK RC, 1974, B AM PHYS SOC, V211, P19

[8] DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J]. PHYSICAL REVIEW, 1962, 125 (04): : 1177 - &

[9] HAWARD RN, 1973, PHYSICS GLASSY POLYM, P5

[10] Juska G., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P363