PREPARATION AND PHASE STUDIES OF TERNARY SEMICONDUCTING COMPOUNDS ZNSNP2, ZNGEP2, ZNSIP2, CDGEP2, AND CDSIP2

ZnSnP2, ZnGeP2, ZnSiP2, CdGeP2 and CdSiP2 have been prepared in single or polycrystalline form by direct synthesis from the elements, combination of the group IV element with the II-V2 phosphide, vapour transport or solution growth. Differential thermal analysis and X-ray powder diffraction studies have been used to determine the temperatures of phase transitions in each of these compounds. Of particular interest is the observation of a phase transition in CdSiP2 at 1098° C some 22° C below the melting point. The thermal analysis studies of ZnSnP2 indicate a peak, the cause of which is uncertain, at 720° C which is well separated from the melting temperature of 930° C; further ZnSnP2 does not appear to be congruently melting and has a freezing point at 970° C. c/a ratios have been determined for all five compounds to 1 part in 2000. © 1969 Chapman and Hall.