PRESSURE SPECTROSCOPY OF IMPURITY STATES AND BAND-STRUCTURE OF BISMUTH TELLURIDE

The pressure and temperature dependences of the resistivity, the Hall effect and the Shubnikov-de Haas effect were investigated in p-Bi2Te3, p-Bi2Te3[Ge] and p-InxBi2-xTe3 for pressures up to 12 kbar and temperatures in the range 1.5 < T < 300 K. In samples of p-InxBi2-xTe3 with x > 0.1 an increase of the upper hole band concentration of carriers under pressure and an increase of the resistivity and of the Hall coefficient R(x) at T < 10 K were observed. The results were interpreted as pointing to the existence of impurity states in In-doped samples.