TRANSIENT ELECTRICAL TRANSPORT IN PURE AND DOPED CHALCOGENIDE GLASSES

被引:6
作者
TAYLOR, PC
NGAI, KL
机构
关键词
D O I
10.1016/0038-1098(81)90565-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:525 / 528
页数:4
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共 30 条
[1]   TIME-RESOLVED DARK INJECTION IN DISPERSIVE MEDIA - DOPED A-AS2SE3 [J].
ABKOWITZ, M .
PHYSICAL REVIEW B, 1980, 22 (08) :3843-3852
[2]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[3]  
[Anonymous], 1967, RANDOM MATRICES
[4]  
EMIN D, 1977, AMORPHOUS LIQUID SEM, P261
[5]   ELECTRON AND HOLE DRIFT MOBILITIES IN VITREOUS SELENIUM [J].
GRUNWALD, HP ;
BLAKNEY, RM .
PHYSICAL REVIEW, 1968, 165 (03) :1006-&
[6]   DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J].
HARTKE, JL .
PHYSICAL REVIEW, 1962, 125 (04) :1177-&
[7]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[8]  
KOLOMIETS BT, 1967, SOV PHYS SEMICOND+, V1, P244
[9]   DRIFT MOBILITY STUDIES IN VITREOUS ARSENIC TRISELENIDE [J].
MARSHALL, JM ;
OWEN, AE .
PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1281-&
[10]  
Ngai K. L., 1979, Comments on Solid State Physics, V9, P127