CUBIC METASTABLE FESI1-X EPITAXIALLY GROWN ON SI AND MGO SUBSTRATES

被引：15

作者：

DEGROOTE, S

VANTOMME, A

DEKOSTER, J

LANGOUCHE, G

机构：

[1] Instituut voor Kern-en Stralingsfysica, University of Leuven, B-3001 Leuven

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00097-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We were able to synthesize an epitaxial metastable FeSi1-x (x = 0.15) phase with the defective CsCl structure on Si(111) as well as on MgO(100) with an iron buffer layer. We compared CEMS and RBS/channeling measurements for samples with different film thicknesses. From X-ray diffraction measurements, we could derive the lattice parameter of the cubic structure on the different substrates. On Si(100) the FeSi1-x phase with defective CsCl structure was not observed. CEMS measurements revealed a lower than cubic site symmetry for the iron atoms and no epitaxy was observed for the latter samples.

引用

页码：72 / 76

页数：5

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