ON THE CHOICE OF OPTIMUM FET SIZE IN WIDEBAND TRANSIMPEDANCE AMPLIFIERS

被引：21

作者：

ABIDI, AA

机构：

[1] Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1988年 / 6卷 / 01期

关键词：

Manuscript received April 21; 1981; revised July 20; 1981. This work was supported by AT&T Bell Laboratories and the State of California MICRO program. The author is with the Integrated Circuits & Systems Laboratory; Electrical Enginering Department; University of California; Los Angeles; CA 90024. IEEE Log Number 8111513;

D O I：

10.1109/50.3965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：64 / 66

页数：3

共 6 条

[1] HIGH-FREQUENCY NOISE MEASUREMENTS ON FETS WITH SMALL DIMENSIONS [J].

ABIDI, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1801-1805

[2] GIGAHERTZ TRANSRESISTANCE AMPLIFIERS IN FINE LINE NMOS [J].

ABIDI, AA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (06) :986-994

[3]

FRASER DL, 1983, FEB ISSCC, V30, P80

[4]

Gray P.R., 1984, ANAL DESIGN ANALOG I

[5] OPTIMUM DESIGN OF A 4-GBIT/S GAAS-MESFET OPTICAL PREAMPLIFIER [J].

MINASIAN, RA .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (03) :373-379

[6]

Smith R. G., 1980, SEMICONDUCTOR DEVICE

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