OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES

The best semiconductors for microwave devices, silicon and gallium arsenide, are restricted in their performance because the electron drift velocity saturates at a fairly low value. It is proposed that InAs-InP alloys should give better performance. Detailed calculations of drift velocity are made by a Monte Carlo technique, and it is shown that some alloys should give drift velocities greater than 4 x 107cm/s. © 1969, The Institution of Electrical Engineers. All rights reserved.