INTERMEDIATE CRYSTALLIZATION OF AMORPHOUS LAYERS OF SILICON AT PULSED LASER ANNEALING

[1] ALEKSANDROV LN, 1987, AVTOMETRIYA, V1, P64

[2] ALEKSANDROV LN, 1985, KINETICS SEMICONDUCT, P224

[3] BAERI P, 1982, LASER ANNEALING SEMI, P78

[4] BALANDIN VY, 1986, ZH TEKH FIZ+, V56, P807

[5] BALANDIN VY, 1986, PHYS STATUS SOLIDI A, V93, pK105, DOI 10.1002/pssa.2210930240

[6] BALANDIN VY, 1986, POVERKH FIZ KHIM MEK, P53

[7] BALANDIN VY, 1986, 7 C GROWTH SYNTH PRO, P151

[8] BALANDIN VY, 1986, COMPUTER SIMULATION, P41

[9] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (03) : 219 - 222

[10] Dvurechenskii A. V., 1982, PULSED ANNEALING SEM

[1] ALEKSANDROV LN, 1987, AVTOMETRIYA, V1, P64

[2] ALEKSANDROV LN, 1985, KINETICS SEMICONDUCT, P224

[3] BAERI P, 1982, LASER ANNEALING SEMI, P78

[4] BALANDIN VY, 1986, ZH TEKH FIZ+, V56, P807

[5] BALANDIN VY, 1986, PHYS STATUS SOLIDI A, V93, pK105, DOI 10.1002/pssa.2210930240

[6] BALANDIN VY, 1986, POVERKH FIZ KHIM MEK, P53

[7] BALANDIN VY, 1986, 7 C GROWTH SYNTH PRO, P151

[8] BALANDIN VY, 1986, COMPUTER SIMULATION, P41

[9] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (03) : 219 - 222

[10] Dvurechenskii A. V., 1982, PULSED ANNEALING SEM