SIMULATION STUDIES OF SILICON ELECTROOPTIC WAVE-GUIDE DEVICES

被引：45

作者：

GIGUERE, SR

FRIEDMAN, L

SOREF, RA

LORENZO, JP

机构：

[1] WORCESTER POLYTECH INST,WORCESTER,MA 01609

[2] USAF,ROME AIR DEV CTR,ESOC,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several silicon-on-insulator guided-wave structures have been analyzed as potential electro-optic waveguide modulators using the pisces-ii two-dimensional (2D) device simulation program. From the electron and hole concentration data, the 2D refractive index profile is obtained. The profile is then spatially averaged with respect to a 2D cosine representation of the guided-wave E field to obtain the effective modal index changes at 1.3 and 1.55 μm. The channel-waveguide devices studied include the metal-oxide-semiconductor (MOS) diode, and the one or two-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with single-or double-transverse injection. The single-gate double-injection MOSFET modulator offers the most promise with 10-3 refractive index changes possible, changes comparable in size to the Pockels effect in LiNbO3 or GaAs.

引用

页码：4964 / 4970

页数：7

共 7 条

[1]

Friedman L., Soref R.A., Lorenzo J.P., J. Appl. Phys., 63, (1988)

[2]

Moss T.S., Burrell G.J., Ellis B., Semiconductor Opto‐Electronics, (1973)

[3]

Adams M.J., Ritchie S., Robertson M.J., Appl. Phys. Lett., 48, (1986)

[4]

Kurdi B.N., Hall D.G., Appl. Phys. Lett., 13, (1988)

[5]

Soref R.A., Bennett B.R., IEEE J. Quantum Electron., QE‐23, (1987)

[6]

Hack M., Shur M., Czubatyi W., Appl. Phys. Lett., 48, (1986)

[7]

Soref R.A., Lorenzo J.P., Solid State Technol., 31, (1988)

← 1 →