PREPARATION OF MULTILAYERED THIN SILICON-ON-INSULATOR STRUCTURE BY LOW-ENERGY OXYGEN ION-IMPLANTATION

被引：17

作者：

ISHIKAWA, Y

SHIBATA, N

机构：

[1] Japan Fine Ceramics Center, Atsuta-ku, Nagoya 456

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 13期

关键词：

D O I：

10.1063/1.107490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilayered thin silicon-on-insulator (SOI) structures have been produced by multiple 25 keV oxygen implantation and in situ silicon growth by molecular beam epitaxy. The structures were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. A double SOI structure after high temperature annealing has the: top silicon layer, upper buried oxide layer, buried silicon layer, and lower oxide layer with thicknesses of 32, 40, 85, and 32 nm, respectively. The multilayered structure has abrupt interfaces between silicon and oxide layers and crystal quality comparable to that produced by the conventional separation by the implanted oxygen (SIMOX) process.

引用

页码：1543 / 1545

页数：3

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