EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1/F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：56

作者：

CORRADETTI, A ^{[1
]}

LEONI, R ^{[1
]}

CARLUCCIO, R ^{[1
]}

FORTUNATO, G ^{[1
]}

REITA, C ^{[1
]}

PLAIS, F ^{[1
]}

PRIBAT, D ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91404 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the noise performances of polycrystalline silicon thin him transistors is presented. The drain current spectral density of these devices shows an evident 1/ f behavior and scales, when operating in the Linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps. (C) 1995 American Institute of Physics.

引用

页码：1730 / 1732

页数：3

共 18 条

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