DIELECTRIC RELAXATIONS IN REDUCED RUTILE (TIO2-X) AT LOW TEMPERATURES

[1] MULTIPLE-BAND CONDUCTION IN N-TYPE RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1872 - &

[2] BECKER JH, 1963, J PHYS SOC JAPAN S2, V18, P152

[3] ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 91 (04): : 793 - 802

[4] TITANIUM DIOXIDE RECTIFIERS [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1952, 49 (02): : 65 - 72

[5] BUESSEM WR, 1959, KINETICS HIGH TEMPER, P13

[6] POINT-DEFECT RELAXATION IN RUTILE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3095 - &

[7] LOW-TEMPERATURE INTERNAL FRICTION PEAK IN RUTILE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1808 - &

[8] ELECTRON SPIN RESONANCE IN SEMICONDUCTING RUTILE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2233 - &

[9] DATE M, 1960, BUSSEI TOKYO, V1, P22

[10] FORLAND K, DA31039SC71190 CONTR

[1] MULTIPLE-BAND CONDUCTION IN N-TYPE RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1872 - &

[2] BECKER JH, 1963, J PHYS SOC JAPAN S2, V18, P152

[3] ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 91 (04): : 793 - 802

[4] TITANIUM DIOXIDE RECTIFIERS [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1952, 49 (02): : 65 - 72

[5] BUESSEM WR, 1959, KINETICS HIGH TEMPER, P13

[6] POINT-DEFECT RELAXATION IN RUTILE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3095 - &

[7] LOW-TEMPERATURE INTERNAL FRICTION PEAK IN RUTILE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1808 - &

[8] ELECTRON SPIN RESONANCE IN SEMICONDUCTING RUTILE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2233 - &

[9] DATE M, 1960, BUSSEI TOKYO, V1, P22

[10] FORLAND K, DA31039SC71190 CONTR