TIGHT-BINDING CALCULATION OF THE BAND OFFSET AT THE GE-GAAS (110) INTERFACE USING A LOCAL CHARGE-NEUTRALITY CONDITION

被引：37

作者：

PRIESTER, C

ALLAN, G

LANNOO, M

机构：

来源：

关键词：

D O I：

10.1103/PhysRevB.33.7386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7386 / 7388

页数：3

共 30 条

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