SENSITIVITY OF DIAZOQUINONE RESISTS TO OPTICAL AND ELECTRON-BEAM EXPOSURE

被引:5
作者
KAPLAN, M
MEYERHOFER, D
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D O I
10.1002/pen.760201607
中图分类号
TQ [化学工业];
学科分类号
0817 ;
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页码:1073 / 1076
页数:4
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共 9 条
[2]   CHARACTERIZATION OF POSITIVE PHOTORESIST [J].
DILL, FH ;
HORNBERGER, WP ;
HAUGE, PS ;
SHAW, JM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :445-452
[3]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[4]   ELECTRON BEAM-INDUCED REACTIONS OF ORTHONAPHTHOQUINONE-DIAZIDE-SULFONYL DERIVATIVES IN PHENOLIC-TYPE RESINS [J].
HIRAOKA, H ;
GUTIERREZ, AR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :860-865
[5]  
ILTEN DF, 1972, J ELECTROCHEM SOC, V199, P539
[6]  
KAPLAN M, 1979, RCA REV, V40, P166
[7]  
Kosar J., 1965, LIGHT SENSITIVE SYST
[8]   PHOTOCHEMICAL STUDIES ON A SUBSTITUTED NAPHTHALENE-2,1,DIAZO-OXIDE - FORMATION AND IDENTIFICATION OF A KETENE FROM A WOLFF REARRANGEMENT [J].
PACANSKY, J ;
JOHNSON, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :862-865
[9]   PERFORMANCE-CHARACTERISTICS OF DIAZO-TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURE [J].
SHAW, JM ;
HATZAKIS, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :425-430