ELECTRICAL PROPERTIES OF INSB-BASED MIXED-CRYSTAL FILMS

被引：11

作者：

AMEMIYA, Y ^{[1
]}

TERAO, H ^{[1
]}

SAKAI, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1063/1.1662422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1625 / 1630

页数：6

共 18 条

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[2] ELECTRICAL PROPERTIES OF INASXSB1-X ALLOYS
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WOOLLEY, JC
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (10P1) : 1207 - +
[3] HILSUM C, 1961, SEMICONDUCTING III V
[4] HALL EFFECT AND CONDUCTIVITY OF INSB
HROSTOWSKI, HJ
MORIN, FJ
GEBALLE, TH
WHEATLEY, GH
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1672 - 1676
[5] IVANOVOMSKII VI, 1962, SOV PHYS-SOL STATE, V4, P216
[6] IVANOVOMSKII VI, 1960, SOV PHYS-SOL STATE, V2, P363
[7] IVANOVOMSKII VI, 1959, SOV PHYS-SOL STATE, V1, P834
[8] SEMICONDUCTING PROPERTIES OF INSB-INAS ALLOYS
KUDMAN, I
EKSTROM, L
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3385 - &
[9] HIGH ELECTRON MOBILITY INSB FILMS PREPARED BY SOURCE-TEMPERATUTE-PROGRAMED EVAPORATION METHOD
OHSHITA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1365 - &
[10] SEMILETOV SA, 1965, SOV PHYS CRYSTALLOGR, V9, P409