NON-OHMIC EFFECTS OF ANDERSON LOCALIZATION

被引：50

作者：

ABRAHAMS, E ^{[1
]}

ANDERSON, PW ^{[1
]}

RAMAKRISHNAN, TV ^{[1
]}

机构：

[1] PRINCETON UNIV,JOSEPH HENRY LABS,PRINCETON,NJ 08540

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 06期

关键词：

D O I：

10.1080/01418638008222330

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：827 / 833

页数：7

共 10 条

[1] ABRAHAMS E, 1979, PHYS REV LETT, V42, P693
[2] ABRIKOSOV AA, 1969, METHODS QUANTUM FIEL
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ANDERSON, PW
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[4] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES
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[5] NON-METALLIC CONDUCTION IN THIN METAL-FILMS AT LOW-TEMPERATURES
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[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (10) : 721 - 724
[6] LANGER J, 1966, PHYS REV, V169, P508
[7] Mott N. F., 1974, METAL INSULATOR TRAN
[8] BREAKDOWN OF CONCENTRATION EXPANSION FOR ZERO-TEMPERATURE IMPURITY RESISTIVITY
NEAL, T
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 508 - &
[9] Thouless D., 1974, PHYS REP, V13, P93, DOI DOI 10.1016/0370-1573(74)90029-5
[10] MAXIMUM METALLIC RESISTANCE IN THIN WIRES
THOULESS, DJ
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (18) : 1167 - 1169