PHOTOPUMPED LASING IN ZNSSE/ZNSE MULTILAYER STRUCTURES UP TO 210-K

被引：10

作者：

SUEMUNE, I

MASATO, H

NAKANISHI, K

YAMADA, K

KAN, Y

YAMANISHI, M

机构：

[1] Faculty of Engineering, Hiroshima University, 724, Shitami, Saijocho, Higashihiroshima

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91074-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Temperature dependence of the lasing threshold up to 180 K previously observed in a photopumped ZnS0.12Se0.88/ZnSe multilayer structure was analyzed by taking into account the thermoionic emission over the heterobarriers and also the surface recombination. In a new structure devised based on the analysis, lasing was observed up to 210 K without excess increase of the threshold, which is the highest temperature ever reported in the blue region with photopumping. © 1989.

引用

页码：754 / 757

页数：4