PHOTOREFLECTANCE CHARACTERIZATION OF INALGAAS MOLECULAR-BEAM EPITAXY LAYERS AND QUANTUM-WELLS

被引：4

作者：

CACCIATORE, C ^{[1
]}

CAMPI, D ^{[1
]}

CORIASSO, C ^{[1
]}

RIGO, C ^{[1
]}

ALIBERT, C ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC EM2,EQUIPE MICROOPTOELECTR MONTPELLIER,CNRS,UNITE 040392,F-34060 MONTPELLIER,FRANCE

来源：

THIN SOLID FILMS | 1991年 / 197卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(91)90214-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the room temperature photoreflectance spectrum from molecular beam epitaxy InAlGaAs epilayers of different compositions, and a InGaAs(7.0 nm)/InAlAs(8.8 nm) multiple quantum well (MQW). The spectra have been fitted by a complex resonance line shape expression. A linear energy gap vs. composition relationship has been obtained for the epilayers. In addition to all the allowed transitions of the MQW, we have observed features from a symmetry-forbidden transition: there is good agreement between the experimentally determined energies of the various features and a theoretical calculation.

引用

页码：1 / 8

页数：8

共 17 条

[1] ENERGY-LEVELS AND OPTICAL-ABSORPTION ASSOCIATED WITH GA0.47IN0.53AS/AL0.48IN0.52AS MQW [J].