GAP-STATES AND THEIR CAPTURE-CROSS-SECTION DISTRIBUTION IN A-SI-H STUDIED BY FREQUENCY-RESOLVED PHOTOCURRENT SPECTROSCOPY

被引：31

作者：

HATTORI, K

NIWANO, Y

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] Faculty of Engineering Science, Osaka University, Toyonaka, Osaka

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80131-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the application of frequency-resolved photocurrent spectroscopy to undoped and P-doped a-Si:H specimens. The frequency-domain experiments detect the midgap states originating from doubly-occupied dangling bonds (D-) distributed around 0.5eV below the conduction band edge, as well as yield the estimates of electron capture cross-sections at 9 x 10(-15) cm2 for D+ and at 5 x 10(-15) cm2 for D0. Potential fluctuations due to random charged-center distribution are also inferred from the cross-section data for doped sample.

引用

页码：363 / 366

页数：4

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