QUANTUM EFFICIENCY IN INSB

被引：74

作者：

BEATTIE, AR

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(62)90122-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1049 / &

共 8 条

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295) :486-495

[2] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[3] PHONON-ASSISTED AUGER EFFECT IN SEMICONDUCTORS [J].

EAGLES, DM .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :204-&

[4] ELECTRON SCATTERING IN INSB [J].

EHRENREICH, H .

[5] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

[6]

Roberts V., 1955, J ELECTRONICS, V1, P152

[7] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J].

TAUC, J .

[8] OSCILLATORY MAGNETO-ABSORPTION IN SEMICONDUCTORS [J].

ZWERDLING, S ;

LAX, B ;

ROTH, LM .

PHYSICAL REVIEW, 1957, 108 (06) :1402-1408