EFFECTS OF TEMPERATURE AND FILAMENT POISONING ON DIAMOND GROWTH IN HOT-FILAMENT REACTORS

被引：52

作者：

DANDY, DS ^{[1
]}

COLTRIN, ME ^{[1
]}

机构：

[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of diamond in a hot-filament reactor has been modeled, and compared with existing experimental data. Studies have been carried out on non-growth systems containing only hydrogen, as well as on systems where the methane concentration at the inlet was varied between 0.4% and 7.2%. The one-dimensional stagnation flow model used here includes detailed gas-phase and surface kinetics. A simple model of filament poisoning has been implemented. The effect of the gas/filament temperature discontinuity on species distributions has also been examined. Gross errors between theory and experiment are obtained when filament poisoning is neglected, but good agreement is found using a simple linear poisoning model. A nonzero temperature discontinuity at the filament produces good overall agreement with experiment.

引用

页码：3102 / 3113

页数：12

共 33 条

[1]

BUTLER JE, 1989, 1ST P INT C DIAM DIA, P317

[2] HYDROGEN-ATOM DETECTION IN THE FILAMENT-ASSISTED DIAMOND DEPOSITION ENVIRONMENT [J].