SYMMETRICAL-GAIN, ZERO-OFFSET, SELF-ALIGNED, AND REFRACTORY-CONTACT DOUBLE HBTS

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[3] TWO-DIMENSIONAL ANALYSIS OF EMITTER-SIZE EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 721 - 725

[4] Ishibashi T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P809

[5] Ishii K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P274

[6] Izawa T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P328

[7] KONSTANTINOV OV, 1985, SOV PHYS SEMICOND+, V19, P1328

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] TRANSPORT AND RELATED PROPERTIES OF (GA, AL) AS/GAAS DOUBLE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 185 - 198

[10] Tiwari S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P262

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 8 - 10

[3] TWO-DIMENSIONAL ANALYSIS OF EMITTER-SIZE EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 721 - 725

[4] Ishibashi T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P809

[5] Ishii K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P274

[6] Izawa T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P328

[7] KONSTANTINOV OV, 1985, SOV PHYS SEMICOND+, V19, P1328

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] TRANSPORT AND RELATED PROPERTIES OF (GA, AL) AS/GAAS DOUBLE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 185 - 198

[10] Tiwari S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P262