ANISOTROPY OF HALL EFFECT OF N-GE IN STRONG NON-QUANTIZING MAGNETIC FIELDS

被引:6
作者
BABICH, VM
BARANSKII, PI
DAKHOVSKII, IV
SAMOILOV.AG
机构
[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr
来源
PHYSICA STATUS SOLIDI | 1969年 / 33卷 / 02期
关键词
D O I
10.1002/pssb.19690330242
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The magnetic field dependence of the Hall coefficient, RH = ‖(H), has been investigated theoretically and experimentally in n‐Ge at 77°K on samples with different orientations (H ‖ [100] and H ‖ [110], I ‖ [110] in both cases) within wide interval of concentration. Calculations of the RH = f(H) dependence were carried out on the basis of the anisotropic scattering theory up to H = 106 Oe and measurements were made in the whole interval of magnetic fields (H ≦ 105 Oe) up to quantizing. Attention is attracted to a necessity of refusal from formal application of H → ∞ for the analysis of the field dependence RH = f(H), since the Boltzmann equation validity has an upper limit of H‐values, corresponding to quantizing effects set up. Taking into account this circumstance in the concrete case of n‐Ge both the results of calculations and the experimental data lead to conclusions that a) throughout the interval of classically strong H (up to 105 Oe at 77°K) the Hall coefficient remains anisotropic; b) when the impurity scattering contribution increases, then beginning with some values of this contribution, the saturation of RH = f(H) throughout the whole classically strong field range cannot be achieved. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:879 / +
页数:1
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