STUDY OF CUINSE2 FORMATION KINETICS IN THE SELENIZATION PROCESS BY RAMAN-SPECTROSCOPY

被引：33

作者：

YAMANAKA, S

TANDA, M

NAKADA, N

YAMADA, A

KONAGAI, M

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, 152, 2-12-1, Ohokayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 03期

关键词：

CUINSE2; CIS; SELENIZATION; RAMAN SPECTROSCOPY; CHALCOPYRITE SEMICONDUCTOR;

D O I：

10.1143/JJAP.30.442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation kinetics of polycrystalline CuInSe2 films in selenization of Cu/In/Se stacked layers was studied using Raman spectroscopy. Raman spectra of the films clearly show a structural change of the film at elevated temperatures. It is concluded that Cu is selenized preferentially at low temperatures around 200-degrees-C and that the CuInSe2 phase is formed at temperatures above 250-degrees-C.

引用

页码：442 / 446

页数：5

共 7 条

[1] CUINSE2 FILMS AND SOLAR-CELLS OBTAINED BY SELENIZATION OF EVAPORATED CU-IN LAYERS [J].

BASOL, BM ;

KAPUR, VK .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1918-1919

[2] DEPOSITION OF CUINSE2 FILMS BY A 2-STAGE PROCESS UTILIZING E-BEAM EVAPORATION [J].

BASOL, BM ;

KAPUR, VK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :418-421

[3]

DIMMLER B, 1988, 20TH P IEEE PHOT SPE, P1426

[4] RAMAN AND INFRARED-SPECTRA OF (CUINSE2)1-X-(2ZNSE)X SYSTEM [J].

GAN, JN ;

TAUC, J ;

LAMBRECHT, VG ;

ROBBINS, M .

PHYSICAL REVIEW B, 1976, 13 (08) :3610-3616

[5]

MITCHELL K, 1988, 20TH P IEEE PHOT SPE, P1384

[6] LATTICE VIBRATIONAL, THERMAL AND MECHANICAL-PROPERTIES OF CUINSE2 [J].

NEUMANN, H .

SOLAR CELLS, 1986, 16 (1-4) :399-418

[7] CHARACTERIZATION OF COPPER INDIUM DISELENIDE THIN-FILMS BY RAMAN-SCATTERING SPECTROSCOPY FOR SOLAR-CELL APPLICATIONS [J].

YAMANAKA, S ;

KONAGAI, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1337-L1340

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