PARAMAGNETIC POINT-DEFECTS IN AMORPHOUS-SILICON DIOXIDE AND AMORPHOUS-SILICON NITRIDE THIN-FILMS .1. A-SIO2

In this paper we review and examine paramagnetic point defects in thin film amorphous silicon dioxide (a-SiO2), which is an important insulating material in modern electronic devices. Findings unique to thin films are compared with results from bulk materials to yield a picture of the structural, physical, chemical, and electronic nature of the defect centers. The most important defect in a-SiO2 is emphasized, the trivalent silicon moiety termed the E' center. We examine the types of E' centers observed in radiation or injection damaged thermal oxides, ion sputtered oxides, plasma enhanced chemical vapor deposited oxides, ion implanted thermal oxides, plastically densified silica, fused silicas, and high surface area sol-gel oxides. The nature of the precursor moieties, and their electrical charging phenomena are discussed. The different varieties of E' centers are categorized, and the reliability of their distinct existence and classification is assessed.