ELECTRICAL-RESISTANCE ANOMALIES IN THE ANTIFERROMAGNETIC STATE OF TERNARY PR-COMPOUNDS

被引：5

作者：

DAS, I

SAMPATHKUMARAN, EV

VIJAYARAGHAVAN, R

机构：

[1] Tata Institute of Fundamental Research, Bombay, 400 005, Homi Bhabha Road

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1992年 / 104卷

关键词：

D O I：

10.1016/0304-8853(92)90402-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical resistivity of PrCu2Si2 exhibits a marginal increase at the antiferromagnetic transition of Pr ions and we attribute this rise to the formation of an energy gap at the Fermi surface due to this transition. The influence of the variations in the conduction electron density, unit-cell volume or Pr concentration on this feature is reported.

引用

页码：874 / 876

页数：3