SEMICONDUCTOR ARRAYS WITH MULTIPLEXER READOUT FOR GAMMA-RAY IMAGING - RESULTS FOR A 48X48 GE ARRAY

被引:15
作者
BARBER, HB
AUGUSTINE, FL
BARRETT, HH
DERENIAK, EL
MATHERSON, KL
MEYERS, TJ
PERRY, DL
VENZON, JE
WOOLFENDEN, JM
YOUNG, ET
机构
[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721
[2] HUGHES TECHNOL CTR,CARLSBAD,CA 92009
[3] UNIV ARIZONA,STEWARD OBSERV,TUCSON,AZ 85721
基金
美国国家卫生研究院;
关键词
D O I
10.1016/0168-9002(94)91676-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We are developing a new kind of gamma-ray imaging device that has sub-millimeter spatial resolution and excellent energy resolution. The device is composed of a slab of semiconductor detector partitioned into an array of detector cells by photolithography and connected to a monolithic circuit chip called a multiplexer (MUX) for readout. Our application is for an ultra-high-resolution SPECT system for functional brain imaging using an injected radiotracer. We report here on results obtained with a Hughes 48 X 48 Ge PIN-photodiode array with MUX readout, originally developed as an infrared focal-plane-array imaging sensor. The device functions as an array of individual gamma-ray detectors with minimal interpixel crosstalk. Linearity of energy response is excellent up to at least 140 keV. The array exhibits excellent energy resolution, similar to 2 keV at less than or equal to 140 keV or 1.5% FWHM at 140 keV. The energy resolution is dominated by MUX readout noise and so should improve with MUX optimization for gamma-ray detection. The spatial resolution of the 48 x 48 Ge array is essentially the same as the pixel spacing, 125 mu m. The quantum efficiency is limited by the thin Ge detector (0.25 mm), but this approach is readily applicable to thicker Ge detectors and room-temperature semiconductor detectors such as CdTe, HgI2 and CdZnTe.
引用
收藏
页码:361 / 365
页数:5
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