THERMALIZATION OF ELECTRON-HOLE PLASMA IN GAAS - CASE OF RESONANT EXCITATION

[1] PIEZOELECTRICITY IN 3-V COMPOUNDS WITH A PHENOMENOLOGICAL ANALYSIS OF PIEZOELECTRIC EFFECT [J]. PHYSICA STATUS SOLIDI, 1968, 25 (01): : 323 - +

[2] LOW-TEMPERATURE NON-OHMIC GALVANOMAGNETIC EFFECTS IN DEGENERATE N-TYPE INAS [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 566 - &

[3] CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P155

[4] SCATTERING PROBABILITIES FOR HOLES .2. POLAR OPTICAL SCATTERING MECHANISM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (01): : 47 - 54

[5] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +

[6] GOEBEL E, 1974, APPL PHYS LETT, V24, P492

[7] WAVELENGTH DEPENDENCE OF GAIN SATURATION IN GAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (10) : 848 - 854

[8] NITROGEN LASER EXCITATION OF POLYMETHINE DYES FOR EMISSION WAVELENGTHS UP TO 9500 A [J]. OPTICS COMMUNICATIONS, 1974, 10 (04) : 310 - 312

[9] INVESTIGATIONS ON UNSATURATED OPTICAL GAIN SPECTRA OF GAAS-GAA1AS-DHS LASERS AT ABOVE THRESHOLD CONDITIONS [J]. APPLIED PHYSICS, 1978, 15 (02): : 149 - 152

[10] DIRECT DETERMINATION OF REDUCED BAND-GAP AND CHEMICAL POTENTIAL IN AN ELECTRON-HOLE PLASMA IN HIGH-PURITY GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (09) : 841 - 844

[1] PIEZOELECTRICITY IN 3-V COMPOUNDS WITH A PHENOMENOLOGICAL ANALYSIS OF PIEZOELECTRIC EFFECT [J]. PHYSICA STATUS SOLIDI, 1968, 25 (01): : 323 - +

[2] LOW-TEMPERATURE NON-OHMIC GALVANOMAGNETIC EFFECTS IN DEGENERATE N-TYPE INAS [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 566 - &

[3] CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P155

[4] SCATTERING PROBABILITIES FOR HOLES .2. POLAR OPTICAL SCATTERING MECHANISM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (01): : 47 - 54

[5] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +

[6] GOEBEL E, 1974, APPL PHYS LETT, V24, P492

[7] WAVELENGTH DEPENDENCE OF GAIN SATURATION IN GAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (10) : 848 - 854

[8] NITROGEN LASER EXCITATION OF POLYMETHINE DYES FOR EMISSION WAVELENGTHS UP TO 9500 A [J]. OPTICS COMMUNICATIONS, 1974, 10 (04) : 310 - 312

[9] INVESTIGATIONS ON UNSATURATED OPTICAL GAIN SPECTRA OF GAAS-GAA1AS-DHS LASERS AT ABOVE THRESHOLD CONDITIONS [J]. APPLIED PHYSICS, 1978, 15 (02): : 149 - 152

[10] DIRECT DETERMINATION OF REDUCED BAND-GAP AND CHEMICAL POTENTIAL IN AN ELECTRON-HOLE PLASMA IN HIGH-PURITY GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (09) : 841 - 844