RAMAN-SPECTROSCOPY OF LOW-DIMENSIONAL SEMICONDUCTORS

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006

[2] Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 468 - 475

[3] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +

[4] ANDO T, 1986, ELECTRONIC PROPERTIE

[5] LOCAL-FIELD EFFECTS AND EFFECTIVE-MEDIUM THEORY - A MICROSCOPIC PERSPECTIVE [J]. AMERICAN JOURNAL OF PHYSICS, 1982, 50 (08) : 704 - 709

[6] BRODSKY MH, 1975, TOP APPL PHYS, V8, pCH5

[7] PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1987, 62 (07) : 449 - 454

[8] Campbell I. H., 1987, 18th International Conference on the Physics of Semiconductors, P1357

[9] CAMPBELL IA, UNPUB

[10] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006

[2] Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 468 - 475

[3] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +

[4] ANDO T, 1986, ELECTRONIC PROPERTIE

[5] LOCAL-FIELD EFFECTS AND EFFECTIVE-MEDIUM THEORY - A MICROSCOPIC PERSPECTIVE [J]. AMERICAN JOURNAL OF PHYSICS, 1982, 50 (08) : 704 - 709

[6] BRODSKY MH, 1975, TOP APPL PHYS, V8, pCH5

[7] PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1987, 62 (07) : 449 - 454

[8] Campbell I. H., 1987, 18th International Conference on the Physics of Semiconductors, P1357

[9] CAMPBELL IA, UNPUB

[10] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741