CHARACTERIZATION OF EPITAXIAL (111) MGO THIN-FILMS

被引:17
作者
HENRY, CR
POPPA, H
机构
[1] IBM CORP DIV RES,ALMADEN RES CTR,SAN JOSE,CA 95120
[2] STANFORD UNIV,DEPT CHEM ENGN,STANFORD,CA 94305
关键词
D O I
10.1016/0040-6090(90)90459-Q
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
(111)-oriented MgO thin films were epitaxially grown on ultrahigh-vacuum-cleaved mica. The MgO films were characterized in situ by Auger electron spectroscopy (AES), energy loss spectroscopy (ELS), and electron energy loss fine structure (EELFS). AES and ELS spectra are characteristic of bulk MgO, but Auger peak intensities indicate a magnesium enrichment of the MgO film surface. EELFS measurements on clean MgO and on MgO films covered with epitaxially deposited Pd clusters suggest that the (111) MgO polar surface is terminated by magnesium atoms. © 1990.
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页码:303 / 312
页数:10
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