HIGH-RESOLUTION S(Q, E) MEASUREMENT ON G-SIO2

被引：17

作者：

ARAI, M

HANNON, AC

TAYLOR, AD

WRIGHT, AC

SINCLAIR, RN

PRICE, DL

机构：

[1] RUTHERFORD APPLETON LAB,ISIS FACIL,DIDCOT OX11 0QX,OXON,ENGLAND

[2] HARWELL LAB,DIV MAT PHYS & MET,DIDCOT OX11 0RA,OXON,ENGLAND

[3] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439

[4] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

来源：

PHYSICA B | 1992年 / 180卷

关键词：

D O I：

10.1016/0921-4526(92)90465-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High energy resolution S(Q, E) measurements on g-SiO2 clarified the details of the VDOS, showing additionally a broad hump at 69 meV and weak sharp peaks at 63 meV and 77 meV. The paper discusses the Q dependence of the VDOS using a model and presents a dynamical pair correlation function.

引用

页码：779 / 781

页数：3

共 9 条

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