MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON

被引:474
作者
KAISER, W
FRISCH, HL
REISS, H
机构
来源
PHYSICAL REVIEW | 1958年 / 112卷 / 05期
关键词
D O I
10.1103/PhysRev.112.1546
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1546 / 1554
页数:9
相关论文
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