ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM

被引：106

作者：

HAYNES, JR

LAX, M

FLOOD, WF

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1959年 / 8卷

关键词：

D O I：

10.1016/0022-3697(59)90373-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：392 / 396

页数：5

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[1] LATTICE VIBRATIONS OF SEMICONDUCTORS BY NEUTRON SPECTROMETRY
BROCKHOUSE, BN
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 400 - 405
[2] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON
MACFARLANE, GG
MCLEAN, TP
QUARRINGTON, JE
ROBERTS, V
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 388 - 392
[3] THE DIRECT AND INDIRECT TRANSITION EXCITONS IN GERMANIUM
ZWERDLING, S
ROTH, L
LAX, B
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 397 - 400