OPTICAL CHARACTERIZATION OF UNDOPED A-SI-H PREPARED BY PHOTO-CVD AND GD TECHNIQUES

被引：5

作者：

KAWASAKI, S ^{[1
]}

SATO, K ^{[1
]}

SUZUKI, K ^{[1
]}

TAKEUCHI, H ^{[1
]}

KUROIWA, K ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI,TOKYO 184,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期

关键词：

D O I：

10.1143/JJAP.26.1400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1400 / 1403

页数：4

共 8 条

[1]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[2]

ASANO A, 1986, JPN J APPL PHYS, V25, P108

[3] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[4]

MORIGAKI K, 1984, SEMICONDUCT SEMIMET, V21, P155

[5]

STREET RA, 1984, SEMICONDUCT SEMIMET, V21, P197

[6] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA .

ADVANCES IN PHYSICS, 1981, 30 (05) :593-676

[7] GAP-STATE PROFILES OF A-SI - H DEDUCED FROM BELOW-GAP OPTICAL-ABSORPTION [J].

YAMASAKI, S ;

OHEDA, H ;

MATSUDA, A ;

OKUSHI, H ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L539-L541

[8]

YAMASAKI S, IN PRESS PHIL MAG B

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