RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS

[1] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[2] ALLEN JW, 1976, COMMUNICATION

[3] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[4] ARNOLD GW, 1969, PHYS REV, V183, P77

[5] BARNES CE, 1976, COMMUNICATION

[6] Bergh A., 1976, LIGHT EMITTING DIODE

[7] Bublik V. T., 1973, Soviet Physics - Crystallography, V18, P218

[8] PHOTOLUMINESCENCE OF H-IMPLANTED AND D-IMPLANTED 4H SIC [J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3214 - 3219

[9] CHOYKE WJ, 1974, PHYS REV B, V10, P2554, DOI 10.1103/PhysRevB.10.2554

[10] CHOYKE WJ, 1972, P 11 INT C PHYS SEM, P177

[1] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[2] ALLEN JW, 1976, COMMUNICATION

[3] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[4] ARNOLD GW, 1969, PHYS REV, V183, P77

[5] BARNES CE, 1976, COMMUNICATION

[6] Bergh A., 1976, LIGHT EMITTING DIODE

[7] Bublik V. T., 1973, Soviet Physics - Crystallography, V18, P218

[8] PHOTOLUMINESCENCE OF H-IMPLANTED AND D-IMPLANTED 4H SIC [J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3214 - 3219

[9] CHOYKE WJ, 1974, PHYS REV B, V10, P2554, DOI 10.1103/PhysRevB.10.2554

[10] CHOYKE WJ, 1972, P 11 INT C PHYS SEM, P177