共 1 条
- [1] MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4
SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING
被引：32
作者：
KATAOKA, S
TATENO, H
KAWASHIM.M
机构：
[1] Electrotechnical Laboratory Ministry of International Trade & Industry Tanashi, Tokyo
关键词：
D O I：
10.1049/el:19690033
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
It is shown that travelling high-field-domain-mode oscillations in GaAs, with nol > 1O12cm-2, can be suppressed by attaching a dielectric material of high permittivity (BaTiO3) to the surfaces of the GaAs. Experimental results observed with a sampling oscilloscope are given. © 1969, The Institution of Electrical Engineers. All rights reserved.
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页码：48 / &
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