CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS

[1] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[2] DEMAN H, TO BE PUBLISHED

[3] DEMAN HJJ, 1971, E, VED18, P833

[4] COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 705 - &

[5] GUMMEL HK, 1961, P IRE, V49, P834

[6] NEW EFFICIENT ONE-DIMENSIONAL ANALYSIS PROGRAM FOR JUNCTION DEVICE MODELING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (01): : 86 - &

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[9] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[10] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[1] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[2] DEMAN H, TO BE PUBLISHED

[3] DEMAN HJJ, 1971, E, VED18, P833

[4] COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 705 - &

[5] GUMMEL HK, 1961, P IRE, V49, P834

[6] NEW EFFICIENT ONE-DIMENSIONAL ANALYSIS PROGRAM FOR JUNCTION DEVICE MODELING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (01): : 86 - &

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[9] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[10] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2