CHARACTERIZATION OF THE OPTICAL-PROPERTIES OF LPE INXGA1-XASYP1-Y THIN-LAYERS GROWN ON INP

被引:15
作者
YAMAZOE, Y [1 ]
TAKAKURA, H [1 ]
NISHINO, T [1 ]
HAMAKAWA, Y [1 ]
KARIYA, T [1 ]
机构
[1] KOCHI UNIV,FAC SCI,KOCHI 780,JAPAN
关键词
D O I
10.1016/0022-0248(78)90475-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:454 / 458
页数:5
相关论文
共 10 条
[1]   DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J].
ANTYPAS, GA ;
EDGECUMBE, J .
JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) :132-138
[2]   HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA [J].
ASPNES, DE ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1971, 27 (04) :188-&
[3]   LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&
[4]  
HAMAKAWA Y, 1976, OPTICAL PROPERTIES S, P259
[5]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[6]   ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].
HSIEH, JJ ;
SHEN, CC .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :429-431
[7]   GAINASP-INP AVALANCHE PHOTO-DIODES [J].
HURWITZ, CE ;
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489
[8]   PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].
NAKAJIMA, K ;
KUSUNOKI, T ;
AKITA, K ;
KOTANI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :123-127
[9]   LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION [J].
REZEK, EA ;
HOLONYAK, N ;
VOJAK, BA ;
STILLMAN, GE ;
ROSSI, JA ;
KEUNE, DL ;
FAIRING, JD .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :288-290
[10]   INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY [J].
WILLIAMS, EW ;
ELDER, W ;
ASTLES, MG ;
WEBB, M ;
MULLIN, JB ;
STRAUGHAN, B ;
TUFTON, PJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1741-1749