ISOELECTRONIC BOUND EXCITON PHOTOLUMINESCENCE FROM A METASTABLE DEFECT IN SULFUR-DOPED SILICON

被引：21

作者：

SINGH, M ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

DAVIES, G ^{[1
]}

JEYNES, C ^{[1
]}

REESON, KJ ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECT & ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90262-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：303 / 307

页数：5

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BROWN, TG ;

HALL, DG .

[3]

CHANTRE A, DEFECTS ELECTRONIC M, P37

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[5] ELECTRONIC-STRUCTURE OF BOUND EXCITONS IN SEMICONDUCTORS [J].

MONEMAR, B ;

LINDEFELT, U ;

CHEN, WM .

PHYSICA B & C, 1987, 146 (1-2) :256-285

[6]

THEWALT MLW, 1989, I PHYS C SER, V95, P505