INTERFACE EXCITONS IN STAGGERED-LINE-UP QUANTUM-WELLS - THE ALAS/GAAS CASE

被引:40
作者
ZIMMERMANN, R
BIMBERG, D
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY
[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STUDIES,SANTA BARBARA,CA 93106
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 23期
关键词
D O I
10.1103/PhysRevB.47.15789
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For spatially indirect excitons in staggered-line-up single quantum wells, binding energies, Bohr radii, and Oscillator strengths are calculated, taking into account finite barrier heights and image-charge effects. Numerical results are presented for a model case of particular fundamental importance. For AlAs/GaAs quantum wells, which are indirect in k space, we find binding energies up to 11 meV for the X(z) exciton and 5 meV for the X(xy) exciton. However, no-phonon oscillator strengths fall below the direct exciton by five orders of magnitude. A comparison to experiment suggests that the X(xy) exciton is lowest in energy.
引用
收藏
页码:15789 / 15793
页数:5
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