IN0.53GA0.47AS PIN PHOTODIODE GROWN BY MOVPE ON A SEMIINSULATING INP SUBSTRATE FOR MONOLITHIC INTEGRATION

被引：10

作者：

WAKE, D

WALLING, RH

SARGOOD, SK

HENNING, ID

机构：

[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1049/el:19870301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 416

页数：2

共 7 条

[1] PLANAR INGAAS PIN PHOTODIODE WITH A SEMI-INSULATING INP CAP LAYER [J].

CAMPBELL, JC ;

DENTAI, AG ;

QUA, GJ ;

LONG, J ;

RIGGS, VG .

ELECTRONICS LETTERS, 1985, 21 (10) :447-448

[2] PLANAR EMBEDDED GALNAS PHOTODIODE ON SEMIINSULATING INP SUBSTRATE FOR MONOLITHIC INTEGRATION [J].

DAWE, PJG ;

SPEAR, DAH ;

THOMPSON, GHB .

ELECTRONICS LETTERS, 1986, 22 (13) :722-724

[3] PLANAR, EMBEDDED INP/GALNASP-I-N PHOTODIODE WITH VERY HIGH-SPEED RESPONSE CHARACTERISTICS [J].

MIURA, S ;

KUWATSUKA, H ;

MIKAWA, T ;

WADA, O .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1522-1524

[4]

Nelson A. W., 1986, British Telecom Technology Journal, V4, P85

[5]

RENAUD JC, 1985, P EUROPEAN C OPT COM, P285

[6] 20 GHZ BANDWIDTH INGAAS PHOTODETECTOR FOR LONG-WAVELENGTH MICROWAVE OPTICAL LINKS [J].

SCHLAFER, J ;

SU, CB ;

POWAZINIK, W ;

LAUER, RB .

ELECTRONICS LETTERS, 1985, 21 (11) :469-471

[7] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER [J].

WAKE, D ;

SCOTT, EG ;

HENNING, ID .

ELECTRONICS LETTERS, 1986, 22 (13) :719-721

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