SPONTANEOUS EMISSION FROM A DIPOLE IN A SEMICONDUCTOR MICROCAVITY

被引：74

作者：

DEPPE, DG

LEI, C

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of a semiconductor microcavity on the radiative spontaneous recombination of an electron-hole pair strategically placed (by virtue of a quantum well) in the microcavity is considered. First-order perturbation theory is used in the quantum mechanical calculation of the spatially anistropic radiation rate and shows a strong influence of the cavity, and dipole position in the cavity, on the spontaneous photon emission process. Calculations are compared with previous experiments [T. J. Rogers, D. G. Deppe, and B. G. Streetman, Appl. Phys. Lett. 57, 1858 (1990)].

引用

页码：3443 / 3448

页数：6

共 22 条

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