SRTIO3 THIN-FILM PREPARATION BY ION-BEAM SPUTTERING AND ITS DIELECTRIC-PROPERTIES

被引：115

作者：

YAMAMICHI, S

SAKUMA, T

TAKEMURA, K

MIYASAKA, Y

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki, 216

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期

关键词：

ION BEAM SPUTTERING; CAPACITOR; DIELECTRIC CONSTANT; FERROELECTRIC THIN FILM; LEAKAGE CURRENT;

D O I：

10.1143/JJAP.30.2193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films have been prepared on Pd-coated sapphire substrates by ion beam sputtering of a SrTiO3 target, and their dielectric properties have been studied. Oxygen flow introduction was necessary to obtain good insulating films. Dielectric constant epsilon(r) values were 190 and 240 for 430-degrees-C and 540-degrees-C substrate temperatures, respectively. These epsilon-r values were not dependent on film thickness in the range from 200 nm down to 50 nm. A 53 nm-thick film indicated leakage current density of less than 10(-8) A/cm2 at up to 2 V, along with a 230 epsilon(r) value.

引用

页码：2193 / 2196

页数：4