EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES

被引:19
作者
COLE, T
MCCOMBE, BD
QUINN, JJ
KALIA, RK
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
[2] ARGONNE NATL LAB,ARGONNE,IL 60439
关键词
D O I
10.1103/PhysRevLett.46.1096
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1096 / 1099
页数:4
相关论文
共 12 条
  • [1] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
    ANDO, T
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272
  • [2] ANDO T, 1976, PHYS REV B, V13, P3466
  • [3] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER
    BLOSS, WL
    SHAM, LJ
    VINTER, V
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1529 - 1532
  • [4] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER
    BLOSS, WL
    SHAM, LJ
    VINTER, B
    [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 250 - 255
  • [5] CHANG KM, 1980, PHYS REV LETT, V44, P1472
  • [6] A SIMPLIFIED TREATMENT OF EXCHANGE AND CORRELATION IN SEMICONDUCTING SURFACE INVERSION-LAYERS
    KALIA, RK
    KAWAMOTO, G
    QUINN, JJ
    YING, SC
    [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (06) : 423 - 426
  • [7] PHONON-MEDIATED INTERVALLEY ELECTRON-ELECTRON INTERACTION IN SILICON
    KELLY, MJ
    [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (07) : 717 - 719
  • [8] MCCOMBE BD, 1979, SOLID STATE COMMUN, V8, P603
  • [9] VALLEY-VALLEY SPLITTING IN INVERSION LAYERS ON A HIGH-INDEX SURFACE OF SILICON
    SHAM, LJ
    ALLEN, SJ
    KAMGAR, A
    TSUI, DC
    [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (07) : 472 - 475
  • [10] WHITE CT, 1979, 3RD P INT C EL PROP, P271